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计算机工程 ›› 2013, Vol. 39 ›› Issue (3): 272-274,278. doi: 10.3969/j.issn.1000-3428.2013.03.054

• 工程应用技术与实现 • 上一篇    下一篇

双立互锁单元单粒子效应加固方法研究

俞 剑   

  1. (复旦大学微电子研究院,上海 200433)
  • 收稿日期:2012-04-28 出版日期:2013-03-15 发布日期:2013-03-13
  • 作者简介:俞 剑(1988-),男,硕士研究生,主研方向:集成电路设计

Research of Harden Method for Dual Interlocked Cell Single Event Effect

YU Jian   

  1. (Institute of Microelectronics, Fudan University, Shanghai 200433, China)
  • Received:2012-04-28 Online:2013-03-15 Published:2013-03-13

摘要: 经典双立互锁单元主从型触发器存在由逆向驱动引起的单粒子翻转情况。为此,通过在主从两级之间插入缓冲器阻断反向驱动路径来解决该问题。对一款双立互锁加固芯片进行地面重粒子实验,实验结果显示,改进型双立互锁单元触发器不仅能消除单粒子功能中断,而且能减少单粒子翻转情况。

关键词: 辐射效应, 单粒子效应, 单粒子瞬态, 辐射加固设计, 双立互锁单元

Abstract: The single event upset is existed in classical Dual Interlocked Cell(DICE) master-slave flip-flop caused by inverse drive. It is solved by inserting the buffer into master-slave to block reverse drive path. A ground heavy ion test is taken on a DICE harden chip. Test results show that the improved DICE flip-flop not only eliminates the single event function interrupt, but also greatly reduces the single event upset.

Key words: radiation effect, single event effect, single event transient, radiation harden design, Dual Interlocked Cell(DICE)

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