计算机工程 ›› 2011, Vol. 37 ›› Issue (18): 25-27.doi: 10.3969/j.issn.1000-3428.2011.18.009

• 博士论文 • 上一篇    下一篇

基于PCI Express的闪存存储系统设计

武国强,林宝军,张善从   

  1. (中国科学院光电研究院,北京 100190)
  • 收稿日期:2011-03-07 出版日期:2011-09-20 发布日期:2011-09-20
  • 作者简介:武国强(1982-),男,博士研究生,主研方向:固态存储系统;林宝军、张善从,研究员、博士
  • 基金项目:
    中科院知识创新工程基金资助项目(060204A0 1Y)

Design of Flash Memory Storage System Based on PCI Express

WU Guo-qiang, LIN Bao-jun, ZHANG Shan-cong   

  1. (Academy of Opto-Electronics, Chinese Academy of Sciences, Beijing 100190, China)
  • Received:2011-03-07 Online:2011-09-20 Published:2011-09-20

摘要: 通过采用PCI Express接口,应用并行和流水线技术,提高存储系统的读写速率。设计闪存映射层算法,在不降低系统读写性能的基础上易于管理数据。该方案在Virtex 5 FPGA上实现,并对其性能进行测试,结果表明,数据连续写速率达到400 MB/s,读速率达到500 MB/s,能满足高端应用的需求。

关键词: 闪存, 存储系统, PCI Express接口, 闪存映射层, 流水线技术

Abstract: By the use of PCI Express interface, and parallelization and pipelining technology, the rate of read and write is raised. A reasonable Flash Translation Layer(FTL) algorithm is designed, the great convenience data management without reducing read and write performance is supplied. The design is implemented on the Virtex 5 FPGA, and its performance is tested. The consecutive write rate is about 400 MB/s, and read rate is up to 500 MB/s. This can meet the demand for high level application.

Key words: flash memory, storage system, PCI Express interface, Flash Translation Layer(FTL), pipelining technology

中图分类号: